发明名称 METHOD FOR MANUFACTURING SOLAR CELL AND APPARATUS FOR MANUFACTURING SOLAR CELL
摘要 <p>A solar cell having high energy conversion efficiency is produced. The surface layer of an n-type polycrystalline silicon layer formed on a p-type polycrystalline silicon substrate is oxidized by using a plasma, and then a silicon nitride film is deposited thereon by CVD, thereby forming a passivation film on the surface layer of the polycrystalline silicon layer. The plasma oxidation process is performed at a pressure within the range of 6.67-6.67 OE10<SUP>2</SUP> Pa at a temperature within the range of 200-600°C by using a plasma of a sheath potential of not more than 10 eV. A microwave for exciting a plasma is supplied into a process chamber through a slot antenna, and a plasma is generated by the surface wave of the microwave.</p>
申请公布号 WO2008062663(A1) 申请公布日期 2008.05.29
申请号 WO2007JP71547 申请日期 2007.11.06
申请人 TOKYO ELECTRON LIMITED;MURAKAWA, SHIGEMI 发明人 MURAKAWA, SHIGEMI
分类号 H01L31/04;C23C16/42;C23C16/511;H01L21/316;H01L21/318;H05H1/46 主分类号 H01L31/04
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