发明名称 |
METHOD FOR MANUFACTURING SOLAR CELL AND APPARATUS FOR MANUFACTURING SOLAR CELL |
摘要 |
<p>A solar cell having high energy conversion efficiency is produced. The surface layer of an n-type polycrystalline silicon layer formed on a p-type polycrystalline silicon substrate is oxidized by using a plasma, and then a silicon nitride film is deposited thereon by CVD, thereby forming a passivation film on the surface layer of the polycrystalline silicon layer. The plasma oxidation process is performed at a pressure within the range of 6.67-6.67 OE10<SUP>2</SUP> Pa at a temperature within the range of 200-600°C by using a plasma of a sheath potential of not more than 10 eV. A microwave for exciting a plasma is supplied into a process chamber through a slot antenna, and a plasma is generated by the surface wave of the microwave.</p> |
申请公布号 |
WO2008062663(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
WO2007JP71547 |
申请日期 |
2007.11.06 |
申请人 |
TOKYO ELECTRON LIMITED;MURAKAWA, SHIGEMI |
发明人 |
MURAKAWA, SHIGEMI |
分类号 |
H01L31/04;C23C16/42;C23C16/511;H01L21/316;H01L21/318;H05H1/46 |
主分类号 |
H01L31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|