| 摘要 |
A non-volatile memory device including a ferroelectric capacitor is disclosed. A method of manufacturing a non-volatile memory device including a ferroelectric capacitor is also disclosed. A first electrode is formed on an insulating film provided on a semiconductor substrate. A first ferroelectric film is formed on the first electrode. The first ferroelectric film has a convexo-concave surface portion. A second ferroelectric film is formed on the first ferroelectric film so as to bury the convexo-concave surface portion. The second ferroelectric film has a surface flatter than that of the first ferroelectric film. A second electrode is formed on the second ferroelectric film. A protective film is formed at least on a portion of an upper surface of the second electrode. The protective film serves as a barrier against hydrogen.
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