| 摘要 |
A ferroelectric layer is formed on a semiconductor substrate, a first hard mask layer is formed on the ferroelectric layer, and a second hard mask layer is formed on the first hard mask layer. A plurality of parallel isolation trenches are formed by etching the second hard mask layer, first hard mask layer, and ferroelectric layer in a direction perpendicular to the major surface of the substrate. Electrode layers are formed on the sidewalls of the ferroelectric layer which face the trenches and on the second hard mask layer.
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