| 摘要 |
The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH<SUB>4</SUB>OH), hydrogen peroxide (H<SUB>2</SUB>O<SUB>2</SUB>) and deionized (DI) water, and a second cleaning solution including ozone (O<SUB>3</SUB>) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.
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