发明名称 Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same
摘要 A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].
申请公布号 US2008121891(A1) 申请公布日期 2008.05.29
申请号 US20060593090 申请日期 2006.11.06
申请人 SAMSUNG SDI CO., LTD. 发明人 LEE HONG-RO
分类号 G01J3/44;H01L21/66;H01L29/04 主分类号 G01J3/44
代理机构 代理人
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