发明名称 |
Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same |
摘要 |
A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].
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申请公布号 |
US2008121891(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20060593090 |
申请日期 |
2006.11.06 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
LEE HONG-RO |
分类号 |
G01J3/44;H01L21/66;H01L29/04 |
主分类号 |
G01J3/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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