HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS

摘要

A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.