| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element which can leave out a photolithography step of forming an opening for passing hydrogen upon sintering in an anti-reflection film, and to provide a manufacturing method of the solid-state imaging element. SOLUTION: In the manufacturing method of the solid-state imaging element 10 which has: a plurality of photoelectrically converting parts formed on a semiconductor substrate; a charge transfer part for transferring charges generating in the photoelectrically converting parts; an oxide film for passing hydrogen upon sintering on the photoelectrically converting parts; and the anti-reflection film formed on the oxide film, wherein the oxide film is formed on the charge transfer part is formed, an anti-reflection film 18 is formed on the oxide film, and the anti-reflection film and an oxide film 16 are flattened to expose at least a part of the charge transfer part, and also to expose an end of the oxide film, thereby forming a path through which hydrogen passes upon sintering. COPYRIGHT: (C)2008,JPO&INPIT
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