METHOD FOR PRODUCING STRAINED SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a high quality strained silicon substrate. SOLUTION: A substrate having a coefficient of thermal expansion smaller than that of a silicon substrate 10, preferably a substrate composed of a material having a coefficient of thermal expansion of 1.3×10-6K-1or less, is employed as a supporting substrate 20. Hydrogen ions are implanted previously in the major surface of an Si substrate 10, and the Si substrate 10 and the supporting substrate 20 are stuck in the temperature range of 100-400°C after surface activation processing. External impact is then applied to the laminate interface thus exfoliating silicon along the hydrogen ion implantation interface 12. On the laminate surface side of the Si substrate 10, a "minute air bubble layer" is formed by hydrogen ion implantation and bonding state of elements is made fragile locally. Since chemical bond in an ion implantation layer 11 is cut easily when external impact is applied, exfoliation of silicon takes place along the ion implantation interface 12 and a strained silicon layer 13 is obtained on the supporting substrate 20. COPYRIGHT: (C)2008,JPO&INPIT