NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride based semiconductor light emitting device is provided to increase a light emitting area by omitting connection electrodes which connects conductive electrode pads or conductive electrodes. A first conductive nitride semiconductor layer(120) is formed on a substrate. An active area is formed on a specified area of the first conductive nitride semiconductor layer. A second conductive nitride semiconductor layer is formed on the active area. A transparent electrode(150) is formed on the second conductive nitride semiconductor layer. A second conductive electrode pad(170a) is formed on the transparent electrode. A second conductive electrode(170) is formed as a linear shape being expanded from the second conductive electrode pad toward the one direction. A first conductive electrode pad(160a) is formed on the first conductive nitride semiconductor layer excluding the active area. A first conductive electrode(160) is formed as the linear shape being expanded from the first conductive electrode pad.