METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED THEREBY

摘要

A method for fabricating a semiconductor device is provided to prevent plenty of O2 from being introduced into a dielectric layer at a time by separating a process for forming a single dielectric layer into two processes. A first ZrO2 layer is formed on a semiconductor substrate(100). A plasma treatment is performed on the first ZrO2 layer to form an interfacial layer. A second ZrO2 layer is formed on the interfacial layer. The thickness of the first ZrO2 can be not greater than that of the second ZrO2 layer. The first and second ZrO2 layers can be formed by an ALD(atomic layer deposition) method.