A METHOD OF FABRICATING A STRUCTURE FOR A SEMICONDUCTOR DEVICE

摘要

There is described a method of fabricating a dual damascene structure for a semiconductor device. A halogen based pre-cursor is used during vapour deposition of a diffusion barrier layer in a trench or via formed in a substrate. Residual halogen from the deposition is allowed to remain on the barrier layer and is used to catalyse growth of a metal layer on the barrier layer to fill the trench or via.