| 摘要 |
In order to reduce boron concentration between a silicon substrate and an Si or Si 1-x Ge x layer which is epitaxially grown in a CVD (chemical vapor deposition) apparatus, the silicon substrate is pretreated, before being loaded into the CVD apparatus, such as to prevent the substrate from being contaminated by boron in a clean room. Further, in accordance with one embodiment, a CVD growth chamber itself is cleaned, before the substrate is loaded into the growth chamber, using an F 2 gas at a predetermined temperature of the substrate, thereby to remove boron residues in the growth chamber;
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