发明名称 INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES BY THERMAL PROCESS
摘要 <p>INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES BY THERMAL PROCESS A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.</p>
申请公布号 SG142270(A1) 申请公布日期 2008.05.28
申请号 SG20070170582 申请日期 2007.10.19
申请人 APPLIED MATERIALS, INC. 发明人 KAWAGUCHI MARK NAOSHI;LO KIN PONG;HOOGENSEN BRETT CHRISTIAN;WEN SANDY M.;KIM STEVEN H.;BAHNG KENNETH J.;DAVIS MATTHEW FENTON;LILL THORSTEN
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