| 摘要 |
FIELD: technological processes. ^ SUBSTANCE: invention is related to technology of single crystals LiNbO3 production of stoichiometric composition, which is used in non-linear optics. Single crystals LiNbO3 are melted incongruently, therefore, for production of single crystals of stoichiometric composition, single crystal pulling is used from liquid phase of eutectic composition with make-up of solid phase of preliminarily synthesised compound, which is heated from bottom and top by double-layer spiral electric heater, which is immersed in liquid phase and installed with gap in respect to making-up solid phase, and reduction of temperature gradients in liquid phase and in produced single crystal is performed by application of furnace for single crystal heating. Device includes mechanism of single crystal pulling, thermally insulated crucible with make-up solid phase, flat heater of crucible with thermal insulation, double-layer spiral electric heater with cross-section of spirals in the form of reverse chutes that overlap all section of crucible, which is installed with gap in respect to make-up solid phase, at that double-layer spiral electric heater is equipped with electrodes that pass through furnace thermal insulation for single crystal heating and are fixed to it. Device heaters form flat isothermal surfaces along crucible height, double-layer spiral electric heater with cross section of spirals in the form of reverse chutes that overlap all section of crucible, removes air bubbles that are produced during dissolution of make-up solid phase, from crystallisation front to crucible walls, installation of double-layer spiral electric heater with gap in respect to make-up solid phase provides its heating up to temperature of dissolution provided that temperature gradients in liquid phase and single crystal are reduced, which is achieved by application of furnace with thermal insulation for heating of pulled single crystal, which enters the crucible as make-up dissolves and single crystal is growing. ^ EFFECT: stabilisation of growth diffusive mechanism performance conditions, reduction of thermal stress in single crystal. ^ 2 cl, 1 dwg |
