发明名称 |
Method for controlling precharge timing of memory device and apparatus thereof |
摘要 |
A method for controlling a precharge timing of a memory device is disclosed. The method includes making timing of generation of a signal for determining a precharge timing in a normal operation and a signal for determining a precharge timing in a refresh operation different from each other by making timing of generation of a signal for controlling the normal operation and a signal for controlling the refresh operation different from each other.
|
申请公布号 |
US7379371(B2) |
申请公布日期 |
2008.05.27 |
申请号 |
US20070834136 |
申请日期 |
2007.08.06 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
IM JAE HYUK;LEE KANG SEOL |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|