发明名称 |
Single-poly EEPROM cell with lightly doped MOS capacitors |
摘要 |
An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell and a method of operation are disclosed for creating an EEPROM memory cell in a standard CMOS process. A single polysilicon layer is used in combination with lightly doped MOS capacitors. The lightly doped capacitors employed in the EEPROM memory cell can be asymmetrical in design. Asymmetrical capacitors reduce area. Further capacitance variation caused by inversion can also be reduced by using multiple control capacitors. In addition, the use of multiple tunneling capacitors provides the benefit of customized tunneling paths.
|
申请公布号 |
US7378705(B2) |
申请公布日期 |
2008.05.27 |
申请号 |
US20050217829 |
申请日期 |
2005.09.01 |
申请人 |
HONEYWELL INTERNATIONAL, INC. |
发明人 |
RIEKELS JAMES E.;LUCKING THOMAS B.;LARSEN BRADLEY J.;GARDNER GARY R. |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|