发明名称 |
Semiconductor memory device having advanced repair circuit |
摘要 |
A semiconductor device for comparing an input address with a repair address includes a signal controller for generating control signals. An address latch unit in response to the control signals latches the address. Each of N number of M-bit address comparators compares the address with the stored repair address. A comparator delay modeling block delays the control signal for a predetermined time, i.e., delay value of the M-bit address comparator. A repair circuit controller in response to the delayed control signal output from the comparator delay modeling block generates one of a repair address enable signal and a normal address enable signal based on a comparison result of the M-bit address comparator.
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申请公布号 |
US7379357(B2) |
申请公布日期 |
2008.05.27 |
申请号 |
US20030749836 |
申请日期 |
2003.12.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KANG SANG-HEE |
分类号 |
G11C7/00;G11C29/04;G11C17/16;G11C29/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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