| 摘要 |
<p>A method of fabricating a semiconductor device is provided to improve a laser cutting margin by partially etching an upper layer of a fuse composed of multi-layered structure. A fuse(111c) having a barrier layer, a metal layer(105) and an anti-reflective coating is formed on a substrate(101). The anti-reflective coating is removed by using a gas mixed with Cl1, BCl3, Ar, N2 and CHF3, and simultaneously, a portion of the metal layer is etched. An insulating layer is formed on the entire surface of the substrate comprising the fuse, and then repair etching is performed on the substrate so that a portion of the insulating layer remains on the upper portion of the fuse. The substrate has a cell region and a fuse region, and an interconnection is formed in the cell region.</p> |
