发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A TFT(Thin Film Transistor) substrate and a method of manufacturing the same are provided to manufacture a TFT substrate using only three masks to simplify a manufacturing process, and reduce the manufacturing cost. A TFT substrate includes a pixel electrode(10) formed from a transparent conductive layer on a substrate, a gate line(20) formed from a transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode(30) connected to the gate line and formed from the transparent conductive layer and the opaque conductive layer on the substrate, and a gate insulating layer(40) covering the gate line and the gate electrode. The TFT substrate further includes a semiconductor layer(50) formed on the gate insulating layer and superposed on the gate electrode, a data line(60) intersecting the gate line, a source electrode(70) connected to the data line and partially superposed on the semiconductor layer, and a drain electrode(80) connected to the pixel electrode and partially superposed on the semiconductor layer. |
申请公布号 |
KR20080045834(A) |
申请公布日期 |
2008.05.26 |
申请号 |
KR20060114990 |
申请日期 |
2006.11.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOUNG, JONG HYUN;PARK, HONG SICK;YOUN, JOO AE;HONG, SUN YOUNG;KIM, BONG KYUN;SHIN, WON SUK;LEE, BYEONG JIN |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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