发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME
摘要 A TFT(Thin Film Transistor) substrate and a method of manufacturing the same are provided to manufacture a TFT substrate using only three masks to simplify a manufacturing process, and reduce the manufacturing cost. A TFT substrate includes a pixel electrode(10) formed from a transparent conductive layer on a substrate, a gate line(20) formed from a transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode(30) connected to the gate line and formed from the transparent conductive layer and the opaque conductive layer on the substrate, and a gate insulating layer(40) covering the gate line and the gate electrode. The TFT substrate further includes a semiconductor layer(50) formed on the gate insulating layer and superposed on the gate electrode, a data line(60) intersecting the gate line, a source electrode(70) connected to the data line and partially superposed on the semiconductor layer, and a drain electrode(80) connected to the pixel electrode and partially superposed on the semiconductor layer.
申请公布号 KR20080045834(A) 申请公布日期 2008.05.26
申请号 KR20060114990 申请日期 2006.11.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOUNG, JONG HYUN;PARK, HONG SICK;YOUN, JOO AE;HONG, SUN YOUNG;KIM, BONG KYUN;SHIN, WON SUK;LEE, BYEONG JIN
分类号 G02F1/136 主分类号 G02F1/136
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