| 摘要 |
A substrate supporting apparatus and a plasma etching apparatus are provided to improve the uniformity of a plasma processing process by uniformly distributing the plasma over the entire surface of a substrate. An electrostatic chuck(210) supports a substrate(W) which is subjected to a plasma process. An edge ring(220) made of a ceramic material is formed to cover a side of the electrostatic chuck and a side of the substrate. A side ring(230) is disposed at an upper edge of the edge ring, and protrudes on the upper surface of the substrate to confine the plasma induced to the electrostatic chuck in a region of the electrostatic chuck. The side ring has exhaust portions spaced apart from each other at regular intervals.
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