发明名称 |
Interconnect Structures with Improved Electromigration Resistance and Methods for Forming Such Interconnect Structures |
摘要 |
Interconnect structures including liner layers that are non-planar with at least the adjacent insulating layer and at least one capping layer on conductive features embedded in the insulating layer. The interconnect structure includes an insulating layer of a dielectric material having a top surface and a bottom surface between the top surface and a substrate. An opening, such as a trench, has sidewalls extending from the top surface of the insulating layer toward the bottom surface and is at least partially filled by a conductive feature. A capping layer is disposed on at least a top surface of the conductive feature. A conductive liner layer is disposed between the insulating layer and the conductive feature along at least the sidewalls of the opening. The conductive liner layer has sidewall portions projecting above the top surface of the insulating layer adjacent to the sidewalls of the opening.
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申请公布号 |
US2008116582(A1) |
申请公布日期 |
2008.05.22 |
申请号 |
US20060562550 |
申请日期 |
2006.11.22 |
申请人 |
HSU LOUIS LU-CHEN;MANDELMAN JACK ALLAN;TONTI WILLIAM ROBERT;YANG CHIH-CHAO |
发明人 |
HSU LOUIS LU-CHEN;MANDELMAN JACK ALLAN;TONTI WILLIAM ROBERT;YANG CHIH-CHAO |
分类号 |
H01L23/535;H01L21/768 |
主分类号 |
H01L23/535 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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