DISTANCE IMAGE SENSOR

摘要

When a first reverse bias voltage applied between a semiconductor substrate (11) and a first semiconductor region (13) is an H bias in a distance image sensor (8), first depletion layers (A1, A1) spreading from the pn junctions of adjacent first semiconductor regions (13) are spread and connected to cover a second depletion layer (B1) spreading from the pn junction of the second semiconductor region (14). Consequently, carriers (C) generated in the vicinity of the backside (11a) in the semiconductor substrate (11) are captured surely in the first depletion layer (A1). When a second reverse bias voltage applied between the semiconductor substrate (11) and the second semiconductor region (14) is an H bias, adjacent second depletion layers are spread and connected to cover the first depletion layer. Consequently, carriers generated in the vicinity of the backside in the semiconductor substrate are captured surely in the second depletion layer.