| 摘要 |
In a nitride semiconductor light-emitting device having an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the active layer has a multiple quantum well structure including a plurality of In<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<x<=1) quantum well layers and a plurality of In<SUB>y</SUB>Ga<SUB>1-y</SUB>N (0<=y<1) barrier layers stacked alternately, and at least one of the plurality of barrier layers has a super-lattice structure in which a plurality of barrier sub-layers having mutually different In composition ratios are stacked periodically.
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