发明名称 |
METHOD OF SMOOTHING SURFACE OF SUBSTRATE FOR EUV MASK BLANK, AND EUV MASK BLANK OBTAINED BY ITS METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of smoothing the surface of a substrate for an EUV mask blank having concave defects such as pits and scratches. <P>SOLUTION: A method of smoothing the surface of a substrate for a reflective type mask blank for EUV lithography is characterized by smoothing the surface of a substrate having concave defects by applying a solution containing a polysilazane compound on the surface of the substrate having the concave defects and heating/curing it to form a silica coating (or a coating containing SiO<SB>2</SB>as a main skeleton). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008118118(A) |
申请公布日期 |
2008.05.22 |
申请号 |
JP20070259525 |
申请日期 |
2007.10.03 |
申请人 |
ASAHI GLASS CO LTD |
发明人 |
IKUTA YORISUKE;MATSUMOTO KATSUHIRO;YOKOYAMA MIKA |
分类号 |
H01L21/027;G03F1/22;G03F1/24 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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