发明名称 METHOD OF SMOOTHING SURFACE OF SUBSTRATE FOR EUV MASK BLANK, AND EUV MASK BLANK OBTAINED BY ITS METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of smoothing the surface of a substrate for an EUV mask blank having concave defects such as pits and scratches. <P>SOLUTION: A method of smoothing the surface of a substrate for a reflective type mask blank for EUV lithography is characterized by smoothing the surface of a substrate having concave defects by applying a solution containing a polysilazane compound on the surface of the substrate having the concave defects and heating/curing it to form a silica coating (or a coating containing SiO<SB>2</SB>as a main skeleton). <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008118118(A) 申请公布日期 2008.05.22
申请号 JP20070259525 申请日期 2007.10.03
申请人 ASAHI GLASS CO LTD 发明人 IKUTA YORISUKE;MATSUMOTO KATSUHIRO;YOKOYAMA MIKA
分类号 H01L21/027;G03F1/22;G03F1/24 主分类号 H01L21/027
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