发明名称 NANOTEMPLATE ARBITRARY-IMPRINT LITHOGRAPHY
摘要 In a method for imprinting a layer of material, a nanotemplate is impressed into a material layer, and the nanotemplate is maintained impressed in the material layer until a geometric trench corresponding to geometry of the nanotemplate is formed in the layer, and the nanotemplate is then removed from the material layer. A nanotemplate geometric trench is repeatedly formed in the material layer by nanotemplate impressions in the layer, until a final desired imprint pattern is produced in the layer. Each nanotemplate geometric trench is characterized by an extent that is a fraction of an extent of the final desired imprint pattern. The material layer is maintained in a condition for accepting nanotemplate impressions continuously throughout the nanotemplate impression repetition.
申请公布号 WO2008060266(A2) 申请公布日期 2008.05.22
申请号 WO2006US38949 申请日期 2006.10.03
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;BERGGREN, KARL, K.;HARRER, STEFAN;SALVATORE, GIOVANNI, A.;YANG, JOEL, K. 发明人 BERGGREN, KARL, K.;HARRER, STEFAN;SALVATORE, GIOVANNI, A.;YANG, JOEL, K.
分类号 G03F7/00 主分类号 G03F7/00
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