ION BEAM TREATMENT FOR THE STRUCTURAL INTEGRITY OF AIR-GAP III-NITRIDE DEVICES PRODUCED BY PHOTOELECTROCHEMICAL (PEC) ETCHING

摘要

A method for ensuring the structural integrity of III-nitride opto-electronic or opto-mechanical air-gap nano-structured devices, comprising (a) performing ion beam implantation in a region of the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device and (b) performing a bandgap selective photo-electro-chemical (PEC) etch on the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device. The method also comprises the suitable design of distributed Bragg reflector (DBR) structures for the PEC etching and the ion-beam treatment, the suitable design of photonic crystal distributed Bragg reflector (PCDBR) structures for PEC etching and the ion-beam treatment, the suitable placement of protection layers to prevent the ion-beam damage to optical activity and PEC etch selectivity, and a suitable annealing treatment for curing the material quality after the ion-beam treatment.