| 摘要 |
A method of forming an isolation layer in a semiconductor device is provided to reduce oxidization of a liner nitride layer on a surface by carrying out a low oxidization preheating process. A trench is formed in a semiconductor substrate(200), and a sidewall oxide layer(210) is formed on an exposed side of the trench. The semiconductor substrate is loaded in a chamber. A liner nitride layer(212) is deposited on the sidewall oxide layer by supplying a nitride deposition source to the chamber. A plasma oxide layer(214) is formed by oxidizing a surface of the liner nitride layer. The semiconductor substrate is unloaded from the chamber, and then a fluid layer(216) is formed to bury a portion of the trench. The substrate is loaded in the chamber, and then a low oxidization preheating process is performed. A burying insulation layer for burying a trench by supplying a deposition gas to the chamber, and the burying insulation layer is planarized to form an isolation layer.
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