| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image sensor semiconductor device used for high-performance image device accompanied by low electrical crosstalk, low noise and high optical performance. <P>SOLUTION: The image sensor semiconductor device includes: a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer. The image sensor semiconductor device is characterized in that, preferably, a thickness of the semiconductor layer may range between about 1 μm and about 20 μm preferably. <P>COPYRIGHT: (C)2008,JPO&INPIT |
