| 摘要 |
A planar-type semiconductor device including a plurality of device isolation areas defining an active area formed over a semiconductor substrate; at least one drift area formed in the semiconductor substrate; a well region formed in the semiconductor substrate; a gate pattern formed over the semiconductor substrate and between the plurality of device isolation areas; a pair of source regions and a drain area formed in the semiconductor substrate adjacent sides of the gate pattern; at least one drift region formed in the well region; a drain region formed in the drift region; and a silicide layer formed over the source regions, the drain region, and partially over the gate pattern. |
