| 摘要 |
A semiconductor device comprises a substrate (214) in which penetrating holes (214a) are formed, the substrate (214) having a first and a second side opposite to each other, said penetrating holes (214a) having first openings on said first side and second openings on said second side; a semiconductor chip (112) having electrodes; a conductive member (118) directly formed over a region including said penetrating holes (214a) on said first side of said substrate (214), and electrically connected to said electrodes of said semiconductor chip (112); and external electrodes (16) which are provided through said penetrating holes (214a), electrically connected to said conductive member (118), and extending as far as outside of said second side of said substrate (214), wherein said substrate (214) is formed of a material of a higher elasticity than said external electrodes (16); and wherein protrusions (220) are formed in the internal wall surfaces of said penetrating holes (214a) by said material constituting said substrate (214). The protrusions (220) form extremities of said first openings. |
