发明名称 |
Lithographic processing method and device manufactured thereby |
摘要 |
A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.
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申请公布号 |
US7374869(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20040830418 |
申请日期 |
2004.04.23 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
KOHLER CARSTEN ANDREAS;VAN SCHOOT JAN BERNARD PLECHELMUS |
分类号 |
G03F7/20;H01L21/027;G03F1/00;G03F1/14;G03F7/26;G03F7/40 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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