发明名称 |
Plasma processing apparatus using active matching |
摘要 |
A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.
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申请公布号 |
US7373899(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20040954074 |
申请日期 |
2004.09.30 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
SUMIYA MASAHIRO;YASUI NAOKI;WATANABE SEIICHI;TAMURA HITOSHI |
分类号 |
H01L21/00;C23C16/507;C23C16/509;C23C16/511;H01J37/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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