发明名称 |
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element |
摘要 |
A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
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申请公布号 |
US7376006(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20050216518 |
申请日期 |
2005.08.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDNORZ JOHANNES GEORG;DEBROSSE JOHN KENNETH;LAM CHUNG HON;MEIJER GERHARD INGMAR;SUN JONATHAN ZANHONG |
分类号 |
G11C11/00;G11C11/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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