发明名称 |
Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof |
摘要 |
The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
|
申请公布号 |
US7375008(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20050075272 |
申请日期 |
2005.03.07 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;OSTERNAUD BENEDITE;AKATSU TAKESHI;FAURE BRUCE |
分类号 |
H01L21/30;B44C1/22;H01L21/302;H01L21/46;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|