发明名称 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
摘要 The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
申请公布号 US7375008(B2) 申请公布日期 2008.05.20
申请号 US20050075272 申请日期 2005.03.07
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 GHYSELEN BRUNO;AULNETTE CECILE;OSTERNAUD BENEDITE;AKATSU TAKESHI;FAURE BRUCE
分类号 H01L21/30;B44C1/22;H01L21/302;H01L21/46;H01L21/762 主分类号 H01L21/30
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