MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY, AND FABRICATION METHOD THEREOF

摘要

A micro-sized semiconductor light-emitting diode having an emitting layer including silicon nano-dots, a semiconductor light-emitting diode array, and a fabrication method thereof are provided to improve light-emitting efficiency by forming a light-emitting layer with a thin film including silicon nano-dots. A light-emitting layer(106) is formed on an upper surface of a silicon substrate(100). The light-emitting layer includes silicon nano-dots. A hole injection layer(104) and an electron injection layer(110) are formed opposite to each other between the light-emitting layers. A transparent conductive electrode layer(112) is formed on the electron injection layer. A first electrode(108) and a second electrode(118) are formed on the hole injection layer and the transparent conductive electrode layer to inject electrons. The light-emitting layer is composed of an amorphous silicon nitride.