| 摘要 |
A substrate processing apparatus and method is provided to increase the process uniformity of a wafer by supplying sufficient amounts of source gas and plasma onto an edge of the wafer. A process chamber(100) provides an internal space for processing a substrate. A support member(200) is installed in the process chamber to support the substrate. A shower head(400) is positioned over the support member to supply a source gas onto the support member. A plasma generating member generates a plasma using the source gas supplied from the shower head. The shower head has a spray plate(420) having plural spray holes spraying the source gas, and plural spray nozzles(424) protruding from the spray plate towards the substrate.
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