| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material suitable for good liquid-immersion lithography, and to provide a pattern-forming method. <P>SOLUTION: The polymer compound contains general formulas in the figure, and has 1,000-500,000 Mw (weight average molecular weight). In the formulas, R<SP>1a</SP>, R<SP>1b</SP>and R<SP>1c</SP>are each H, F, an alkyl group or a fluorinated alkyl group; R<SP>2a</SP>is H, -R<SP>3</SP>-CO<SB>2</SB>R<SP>7</SP>or -R<SP>3</SP>-OR<SP>7</SP>; R<SP>2c</SP>is a fluorinated alkyl group; R<SP>3</SP>is a divalent organic group which may contain a fluorine; R<SP>4</SP>is a methylene group or an oxygen atom; R<SP>5</SP>is H, a methyl group or a trifluoromethyl group; R<SP>6</SP>is a fluorinated alkyl group; R<SP>7</SP>is H, an alkyl group, a fluorinated alkyl group, an acid-unstable group or an adhesive group; 0≤a<1; 0<b<1; 0≤c<1; 0<a+b+c≤1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
