| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a device that processes a substrate using plasma, a method of supplying plasma, and a method of supplying plasma and processing a substrate. <P>SOLUTION: After oxygen plasma is primarily supplied to an upper portion of a substrate and photoresist is primarily removed, oxygen plasma and fluorine-based plasma are secondarily supplied and photoresist and residual materials are secondarily removed. At this time, the oxygen plasma is directly discharged by a separate discharging device. However, the fluorine-based plasma is indirectly generated by the oxygen plasma by a fluorine-based source gas being supplied over a flow path of the oxygen plasma supplied to the substrate. The plasma is supplied onto the substrate via a baffle on which numerous through-holes are formed. Ion included within the plasma is filtered by a grounded baffle. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
