| 摘要 |
A semiconductor device, formed on a semiconductor substrate, including a first memory array formed in a first region and including first word lines, first bit lines across the first word lines, and memory cells at intersections of the first word lines and the first bit lines, a second memory array which is formed in a second region and including second word lines, second bit lines across the second word lines, and memory cells at intersections of the second word lines and the second bit lines, and address pads located in a third region, in which the first region, the third region and the second region are arranged in that order in the first direction, the address input pads being arranged between a center axis of the first direction of the substrate and the first region, and no address input pads are arranged between the center axis and the second region. |
