| 摘要 |
A malfunction preventing circuit of a MOSFET(Metal-Oxide Semiconductor Field-Effect Transistor) is provided to prevent malfunction of the MOSFET in initial activation by bypassing a current flowing on an N-channel of the MOSFET when a driving signal of an inverter is in an off state. A malfunction preventing circuit of a MOSFET includes MOSFETs(Q1,Q2), a switching transistor(Q3), and a control transistor(Q4). The MOSFETs are switched by receiving a pulse width modulation signal supplied from a controller and control the supply of an input voltage(Vin) to a primary terminal of a transformer. The switching transistor is connected to an N-channel of the MOSFET and switches to bypass a current flowing on the N-channel to a ground. The control transistor is turned on and off according to a driving signal of an inverter and controls on and off states of the switching transistor. |
