PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

This invention provides a process for producing a silicon carbide single crystal, comprising maintaining a crucible at such a temperature that can prevent the sublimation of a silicon carbide material, under an evacuated atmosphere in a predetermined time, and then heating the crucible at such a temperature that can sublimate the silicon carbide material under an argon gas atmosphere, whereby the silicon carbide material is sublimated to allow a silicon carbide single crystal to grow on the surface of a seed crystal. The above constitution can realize the production of a silicon carbide single crystal of which the concentration of impurities in its inside is low and which has a high resistivity.