发明名称 PHOTOELECTRIC TRANSDUCER, AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric transducer not only attaining a lightening and the reduction of a cost by decreasing the use of a semiconductor but also being capable of sufficiently collecting a light to crystal semiconductor grains. <P>SOLUTION: The photoelectric transducer has a conductive substrate 1, a large number of spherical first conductivity type crystal semiconductor grains 2 forming second conductive type semiconductor sections 3 on surface layers and being mutually joined at intervals on the conductive substrate 1 and insulating layers 4 formed among the crystal semiconductor grains 2 on the conductive substrate 1. The photoelectric transducer further has light reflecting members 7 being formed on the insulating layers 4 and having recessed surface-shaped light reflecting surfaces collecting a light to the crystal semiconductor grains 2 and opening sections exposing the upper sections of the crystal semiconductor grains 2 at the lower end sections of the light reflecting surfaces and light-transmitting conductive layers 5 continuously coated on the crystal semiconductor grains 2 and the light reflecting members 7. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008112821(A) 申请公布日期 2008.05.15
申请号 JP20060294109 申请日期 2006.10.30
申请人 KYOCERA CORP 发明人 TOMITA KENJI
分类号 H01L31/04 主分类号 H01L31/04
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