MASK ETCHING PLASMA REACTOR WITH CATHODE OF UNIFORM ETCHING RATE DISTRIBUTION

摘要

PROBLEM TO BE SOLVED: To provide a plasma reactor for etching a work such as a rectangular or square mask.

SOLUTION: The plasma reactor comprises a vacuum chamber having a ceiling and a sidewall, and a work supporting base including a cathode having a surface for supporting a work in the chamber wherein the surface includes a plurality of individual regions formed of individual materials of different electrical characteristics. The regions can be arranged concentrically to the axis of symmetry of the wafer supporting base.

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