发明名称 |
Sense Amplifiers Including Multiple Precharge Circuits and Associated Memory Devices and Sensing Methods |
摘要 |
A sense amplifier of a flash memory device maintains a bit line precharge level before a memory cell is sensed. The sense amplifier maintains the voltage of a bias signal sufficiently high using a second precharging circuit in a precharging operation to stably maintain the bit line precharge level set by a first precharging circuit. Accordingly, the sense amplifier can correctly sense an OFF cell using the stabilized bit line precharge voltage. Related methods and memory devices are also disclosed.
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申请公布号 |
US2008112229(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20060563746 |
申请日期 |
2006.11.28 |
申请人 |
SAMSUNG ELECTRONIC CO., LTD. |
发明人 |
CHO JI-HO;NAM SANG-WAN |
分类号 |
G11C16/06;G11C7/00;G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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