发明名称 |
Read window in chalcogenide semiconductor memories |
摘要 |
Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
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申请公布号 |
US2008112217(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20060595055 |
申请日期 |
2006.11.09 |
申请人 |
KARPOV ILYA V;KOSTYLEV SERGEY;GORDON GEORGE A;PARKINSON WARD D |
发明人 |
KARPOV ILYA V.;KOSTYLEV SERGEY;GORDON GEORGE A.;PARKINSON WARD D. |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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