发明名称 SEMICONDUCTOR ELEMENT CAPABLE OF TUNING MACRO AND MICRO FREQUENCIES, AND ANTENNA AND FREQUENCY TUNING CIRCUIT INCLUDING THE SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor element capable of tuning macro and micro frequencies, and to provide an antenna and a frequency tuning circuit including the semiconductor element, the semiconductor element in which a PIN diode and a varactor diode are configured by a single element, thereby solving insertion loss, complexity of DC power supply circuit, increase in circuit volume, deterioration of varactor diode linearity, and the like. <P>SOLUTION: The present invention relates to a semiconductor element capable of tuning macro and micro frequencies, and an antenna and a frequency tuning circuit including the semiconductor element. The semiconductor element includes a first semiconductor and a second semiconductor having a same polarity, a third semiconductor disposed between the first semiconductor and the second semiconductor and having a polarity differing from that of the first semiconductor and the second semiconductor, and a pair of intrinsic semiconductors respectively disposed between the first semiconductor and the third semiconductor and between the third semiconductor and the second semiconductor. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008113000(A) 申请公布日期 2008.05.15
申请号 JP20070277548 申请日期 2007.10.25
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JUNG CHANG-WON;CHOI JUNG-HAN;SO INSO;KIM YOUNG-EIL
分类号 H01L29/861;H01L21/822;H01L27/04;H01L29/93;H01Q5/00;H01Q9/42 主分类号 H01L29/861
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