| 摘要 |
An exemplary thin film transistor substrate ( 30 ) includes a bas substrate ( 31 ) and a gate electrode ( 32 ) formed on the bas substrate. The gate electrode includes a bonding layer ( 321 ) formed on the bas substrate and an electrically conductive layer ( 322 ) formed on the bonding layer. The bonding layer includes one of aluminum oxide and zirconium dioxide.
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