发明名称 |
3D-VERBINDUNG MIT HERAUSRAGENDEN KONTAKTEN |
摘要 |
<p>This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.</p> |
申请公布号 |
DE602005005840(D1) |
申请公布日期 |
2008.05.15 |
申请号 |
DE20056005840T |
申请日期 |
2005.08.29 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT CO. |
发明人 |
CHEN, CHIEN-HUA;CHEN, ZHIZHANG;MEYER, NEAL W. |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|