| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element for enhancing emission efficiency while operation voltage is lowered. <P>SOLUTION: The nitride semiconductor light emitting element is constituted by a substrate; an n-type nitride semiconductor layer formed on the substrate, an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer, to which p-type impurity is doped 1×10<SP>20</SP>/cm<SP>3</SP>or more, and which is formed on the p-type nitride semiconductor layer; a transparent oxidation electrode formed on the p-type contact layer; a p-type electrode formed on the transparent oxidation electrode; and n-type electrode formed on the n-type nitride semiconductor layer, where the active layer was not formed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
