| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can sufficiently lower the series resistance component of signal lines, can reduce high-frequency resistance even in the case of using for transmitting high-frequency signals, and can further raise power gains if, for example, used for high-power MMICs. SOLUTION: In this semiconductor, a microstrip line 300 including an interlayer film and a signal line of a two-layer wiring structure (upper and lower layer wirings) is formed on a semiconductor substrate where predetermined elements are formed. On the lower wiring 306, an interlayer with a plurality of contact holes 310 that provide openings for the lower wiring 306 is formed. The upper wiring 312 is formed on all the surfaces including the side surface and bottom surface of the contact holes 310. COPYRIGHT: (C)2008,JPO&INPIT
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